Channel hot-carrier stressing of reoxidized nitrided oxide p-MOSFETs
- 1 April 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 38 (4) , 901-906
- https://doi.org/10.1109/16.75221
Abstract
No abstract availableKeywords
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