The relationship between gate bias and hot-carrier-induced instabilities in buried- and surface-channel PMOSFETs

This publication has 5 references indexed in Scilit:

• Hot-electron-induced punchthrough (HEIP) effect in submicrometer PMOSFET's
  IEEE Transactions on Electron Devices, 1987
• Hot-carrier-induced degradation in p-channel LDD MOSFET's
  IEEE Electron Device Letters, 1986
• Design tradeoffs between surface and buried-channel FET's
  IEEE Transactions on Electron Devices, 1985
• Relationship between hot-electrons/Holes and degradation of p- and n-channel MOSFET's
  IEEE Electron Device Letters, 1985
• Hot-electron aging in p-channel MOSFET's for VLSI CMOS
  IEEE Transactions on Electron Devices, 1984