Hot-electron-induced punchthrough (HEIP) effect in submicrometer PMOSFET's
- 1 April 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 34 (4) , 839-844
- https://doi.org/10.1109/t-ed.1987.23004
Abstract
Degradation of device characterisitics due to hot-carrier injection in submicrometer PMOSFET has been investigated. We found that in submicrometer p-channel transistors the punchthrough voltage is seriously reduced due to hot-electon-induced punchthrough (HEIP). A worst case analysis of the experimental data shows substantially reduced lifetime due to HEIP.Keywords
This publication has 12 references indexed in Scilit:
- Hot-carrier-induced degradation in p-channel LDD MOSFET'sIEEE Electron Device Letters, 1986
- Optimum design of n+-n-double-diffused drain MOSFET to reduce hot-carrier emissionIEEE Transactions on Electron Devices, 1985
- Relationship between hot-electrons/Holes and degradation of p- and n-channel MOSFET'sIEEE Electron Device Letters, 1985
- Hot carrier degradation mechanism in n-MOSFETSPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1984
- Effects of hot-carrier trapping in n- and p-channel MOSFET'sIEEE Transactions on Electron Devices, 1983
- Comparison of characteristics of n-channel and p-channel MOSFET's for VLSI'sIEEE Transactions on Electron Devices, 1983
- Generation of interface states by hot hole injection in MOSFET'sIEEE Transactions on Electron Devices, 1982
- Submicrometer MOSFET structure for minimizing hot-carrier generationIEEE Transactions on Electron Devices, 1982
- Effect of long-term stress on IGFET degradations due to hot electron trappingIEEE Transactions on Electron Devices, 1981
- Threshold-voltage instability in MOSFET's due to channel hot-hole emissionIEEE Transactions on Electron Devices, 1981