Fabrication of a nanometric Zn dot by nonresonant near-field optical chemical-vapor deposition
- 20 August 2001
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 79 (8) , 1184-1186
- https://doi.org/10.1063/1.1394955
Abstract
We demonstrate a technique for the deposition of nanometric Zn dots by photodissociation of gas-phase diethylzinc using an optical near field under nonresonant conditions. The observed deposited Zn dot was less than 50 nm in size. The photodissociation mechanisms are based on the unique properties of optical near fields, i.e., enhanced two-photon absorption, induced near-field transition, and a direct excitation of the vibration-dissociation mode of diethylzinc.Keywords
This publication has 9 references indexed in Scilit:
- Nanofabrication and atom manipulation by optical near-field and relevant quantum optical theoryProceedings of the IEEE, 2000
- Fabrication of nanometric zinc pattern with photodissociated gas-phase diethylzinc by optical near fieldApplied Physics Letters, 2000
- Vacuum Shear Force Microscopy Application to High Resolution WorkJapanese Journal of Applied Physics, 1999
- Nanometric patterning of zinc by optical near‐field photochemical vapour depositionJournal of Microscopy, 1999
- Theory on Rates of Excitation-Energy Transfer between Molecular Aggregates through Distributed Transition Dipoles with Application to the Antenna System in Bacterial PhotosynthesisThe Journal of Physical Chemistry B, 1998
- Atomic-scale formation of ultrasmooth surfaces on sapphire substrates for high-quality thin-film fabricationApplied Physics Letters, 1995
- Vibrational energy of the monoalkyl zinc product formed in the photodissociation of dimethyl zinc, diethyl zinc, and dipropyl zincThe Journal of Chemical Physics, 1992
- Metal-alkyl bond dissociation energies for (CH3)2Zn, (C2H5)Zn, (CH3)2Cd, and (CH3)2HgChemical Physics Letters, 1989
- Low temperature growth of ZnO film by photo-MOCVDJournal of Crystal Growth, 1988