Low Temperature Preparation of Gallium Nitride Thin Films
- 1 January 1992
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Atmospheric pressure chemical vapor deposition of aluminum nitride thin films at 200–250 °CJournal of Materials Research, 1991
- Atmospheric Pressure Chemical Vapor Deposition of Gallium Nitride Thin FilmsMRS Proceedings, 1990
- Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−AlN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPEJournal of Crystal Growth, 1989
- Chemical vapor deposition of gallium nitride from diethylgallium azideChemistry of Materials, 1989
- Perspective On Gallium NitrideMRS Proceedings, 1989
- OMVPE of GaN and AIN films by metal alkyls and hydrazineJournal of Crystal Growth, 1986
- Growth of GaN single crystal films using electron cyclotron resonance plasma excited metalorganic vapor phase epitaxyApplied Physics Letters, 1986
- The chemical preparation of gallium nitride layers at low temperaturesJournal of Materials Science, 1980
- Electrical and Optical Properties of rf-Sputtered GaN and InNApplied Physics Letters, 1972
- The Use of Metalorganics in the Preparation of Semiconductor MaterialsJournal of the Electrochemical Society, 1971