Formation of silicides by rapid thermal annealing over polycrystalline silicon
- 15 July 1986
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 60 (2) , 631-634
- https://doi.org/10.1063/1.337404
Abstract
We have investigated the formation of titanium silicide by rapid thermal annealing in nitrogen and argon ambients over polycrystalline silicon. A sheet resistance of about 3 Ω per square for a 300-Å Ti layer was achieved after 900 °C/10-s annealing treatment, which decreased to about 2 Ω per square after 1100 °C/10-s treatment. The silicides were found to be stable during rapid thermal annealing up to 1100 °C/10 s with no or negligible migration of titanium along the grain boundaries in polycrystalline silicon. An external layer (titanium rich, mixture of titanium oxide and nitride) was observed to form during rapid thermal annealing treatment in the nitrogen ambient, but the surface remained clean in the argon ambient.This publication has 3 references indexed in Scilit:
- Direct imaging of dopant distributions in silicon by scanning transmission electron microscopyApplied Physics Letters, 1984
- Heat-pulse annealing of arsenic-implanted silicon with a CW arc lampIEEE Electron Device Letters, 1981
- Refractory silicides for integrated circuitsJournal of Vacuum Science and Technology, 1980