Ultralow-dark-current wafer-bonded Si/InGaAs photodetectors
- 4 October 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 75 (14) , 2141-2143
- https://doi.org/10.1063/1.124943
Abstract
A method of wafer bonding is demonstrated which significantly reduces the thermal expansion mismatch stress, by removing the substrate before the high temperature anneal, thereby allowing elastic accommodation of the thin device layers. Record low-dark-current Si/InGaAs pin detectors have been realized.Keywords
This publication has 11 references indexed in Scilit:
- Characterization of wafer bonded photodetectors fabricated using various annealing temperatures and ambientsApplied Physics Letters, 1997
- Wafer Fusion for Surface-Normal Optoelectronic Device ApplicationsInternational Journal of High Speed Electronics and Systems, 1997
- Wafer fusion: materials issues and device resultsIEEE Journal of Selected Topics in Quantum Electronics, 1997
- Direct wafer bonding of III-V compound semiconductors for free-material and free-orientation integrationIEEE Journal of Quantum Electronics, 1997
- 20 GHz high performance planar Si/InGaAs p-i-n photodetectorApplied Physics Letters, 1997
- High gain-bandwidth-product silicon heterointerface photodetectorApplied Physics Letters, 1997
- Silicon heterointerface photodetectorApplied Physics Letters, 1996
- Room-temperature CW operation of InGaAsP lasers on Si fabricated by wafer bondingIEEE Photonics Technology Letters, 1996
- High-performance InGaAs photodetectors on Si and GaAs substratesApplied Physics Letters, 1995
- High-quality InGaAs/InP multiquantum-wellstructures on Si fabricated by direct bondingElectronics Letters, 1994