Characterization of wafer bonded photodetectors fabricated using various annealing temperatures and ambients
- 15 September 1997
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 71 (11) , 1507-1509
- https://doi.org/10.1063/1.119950
Abstract
A detailed study of the important role of temperature and gas ambient on the bonding between Si and InGaAs wafers was performed. The heterointerface was characterized by fabricating p-i-n photodetectors and measuring the forward and reverse currents, the capacitance, the absolute quantum efficiency, and the response bandwidth. Clear evidence for a thin tunneling barrier is found for nonoptimum fusing conditions.Keywords
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