Semiconductor lasers on Si substrates using the technology of bonding by atomic rearrangement
- 8 March 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (10) , 1038-1040
- https://doi.org/10.1063/1.108787
Abstract
We demonstrated InGaAs/GaAs strained quantum well lasers on silicon substrates. The epitaxial layers for lasers were first grown on a GaAs substrate and then bonded to a silicon substrate using the technology of bonding by atomic rearrangement. Covalently bonded III-V/Si heterointerface was confirmed by the cross-sectional transmission electron microscopy. The ridge waveguide lasers on Si substrates lasing at about 1 μm wavelength have a 12 mA threshold current and a 56% external quantum efficiency at room temperature, at pulsed condition. Both the threshold current and the external quantum efficiency are close to the values of lasers on GaAs substrates. The technology of bonding by atomic rearrangement will be useful for making optoelectronic integrated circuits on Si.Keywords
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