Intrinsic electronic transport properties of organic field-effect transitors based on single crystalline tetramethyltetraselenafulvalene
- 2 December 2003
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 83 (23) , 4782-4784
- https://doi.org/10.1063/1.1631751
Abstract
We report the fabrication of field-effect transistors on single crystals of the highly anisotropic organic semiconductor tetramethyltetraselenafulvalene. We find maximum mobilities of at room temperature. We observe an exponential decrease of mobility with decreasing temperature with an activation energy independent of sample quality or fabrication method.
Keywords
This publication has 15 references indexed in Scilit:
- Field Effect Transport Measurements on Single Grains of Sexithiophene: Role of the ContactsThe Journal of Physical Chemistry B, 2000
- Gate voltage dependent mobility of oligothiophene field-effect transistorsJournal of Applied Physics, 1999
- Physical vapor growth of organic semiconductorsJournal of Crystal Growth, 1998
- Temperature-independent transport in high-mobility pentacene transistorsApplied Physics Letters, 1998
- Organic Field-Effect TransistorsAdvanced Materials, 1998
- Organic Transistors: Two-Dimensional Transport and Improved Electrical CharacteristicsScience, 1995
- All-Polymer Field-Effect Transistor Realized by Printing TechniquesScience, 1994
- 4,4',5,5-Tetramethyl-Δ2,2'-bis-1,3-diselenole, TMTSFActa Crystallographica Section B: Structural Science, Crystal Engineering and Materials, 1979
- Lattice Relaxation and Small-Polaron Hopping MotionPhysical Review B, 1971
- Correlated Small-Polaron Hopping MotionPhysical Review Letters, 1970