Gate voltage dependent mobility of oligothiophene field-effect transistors
- 15 March 1999
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 85 (6) , 3202-3206
- https://doi.org/10.1063/1.369661
Abstract
Organic field-effect transistors, in which the active semiconductor is made of oligothiophenes of various lengths, have been fabricated and characterized. A method is developed to estimate the field-effect mobility μ corrected for the contact series resistance. The mobility is found to increase by a factor of nearly 100 from quaterthiophene (4T) to octithiophene (8T). More importantly, μ increases quasilinearly with gate voltage. The origin of this gate bias dependence is discussed. One explanation could be the presence of traps that limit charge transport. Alternatively, the gate-voltage dependence is tentatively attributed to a dependence of the mobility with the concentration of carriers in the accumulation layer.This publication has 16 references indexed in Scilit:
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