Many-body effects on modulation-doped InAs/GaAs quantum dots
- 26 May 1997
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (21) , 2885-2887
- https://doi.org/10.1063/1.119031
Abstract
The excitation intensity dependent photoluminescence spectra of various modulation-doped InAs/GaAs quantum dots exhibit the band filling and band-gap renormalization. From the time-resolved photoluminescence spectra, in addition to the interaction of the carriers in quantum dots with the remote ionized impurities in a GaAs barrier, the screening due to the two-dimensional charges is found to mainly affect the carrier lifetime in the modulation-doped quantum dots.Keywords
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