The Use of a Modulated Light Spot in Semiconductor Measurements
- 1 November 1955
- journal article
- Published by IOP Publishing in Proceedings of the Physical Society. Section B
- Vol. 68 (11) , 918-921
- https://doi.org/10.1088/0370-1301/68/11/315
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- On the Measurement of Minority Carrier Lifetime in n-Type SiliconProceedings of the Physical Society. Section B, 1955
- Drift Mobilities in Semiconductors. I. GermaniumPhysical Review B, 1953
- Measurement of Hole Diffusion in-Type GermaniumPhysical Review B, 1951