On the Measurement of Minority Carrier Lifetime in n-Type Silicon
- 1 March 1955
- journal article
- Published by IOP Publishing in Proceedings of the Physical Society. Section B
- Vol. 68 (3) , 121-129
- https://doi.org/10.1088/0370-1301/68/3/301
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Carrier Extraction in GermaniumProceedings of the Physical Society. Section B, 1955
- Current Multiplication Processes in n-Type Germanium Point-Contact TransistorsProceedings of the Physical Society. Section B, 1954
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- Measurement of Minority Carrier Lifetime and Contact Injection Ratio on Transistor MaterialsProceedings of the Physical Society. Section B, 1954
- Photoelectromagnetic and Photoconductive Effects in Lead Sulphide Single CrystalsProceedings of the Physical Society. Section B, 1953
- The Reduction of Rectifier Noise by IlluminationProceedings of the Physical Society. Section B, 1953
- Enhanced Alpha in Formed Silicon Point Contact TransistorsJournal of Applied Physics, 1953
- A Study of Carrier Injecting Properties of Emitter Contacts and Light Spots at Normal and Moderately Elevated TemperaturesProceedings of the Physical Society. Section B, 1953
- The Drift Mobility of Electrons in SiliconPhysical Review B, 1952
- The Mobility and Life of Injected Holes and Electrons in GermaniumPhysical Review B, 1951