Current Multiplication Processes in n-Type Germanium Point-Contact Transistors
- 1 August 1954
- journal article
- Published by IOP Publishing in Proceedings of the Physical Society. Section B
- Vol. 67 (8) , 636-643
- https://doi.org/10.1088/0370-1301/67/8/305
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- On the Current Gain of Germanium Filamentary TransistorsProceedings of the Physical Society. Section B, 1954
- The Theory of Rectification and Injection at a Metal-Semiconductor ContactProceedings of the Physical Society. Section B, 1954
- Some techniques for making stable non-rectifying contacts to germanium and other semi-conductorsJournal of Scientific Instruments, 1954
- The Temperature Dependence of the Drift Mobility of Injected Holes in GermaniumProceedings of the Physical Society. Section B, 1954
- The Reduction of Rectifier Noise by IlluminationProceedings of the Physical Society. Section B, 1953
- A Study of Carrier Injecting Properties of Emitter Contacts and Light Spots at Normal and Moderately Elevated TemperaturesProceedings of the Physical Society. Section B, 1953
- The Temperature Dependence of Drift Mobility in GermaniumPhysical Review B, 1953
- Theory of Relation between Hole Concentration and Characteristics of Germanium Point ContactsBell System Technical Journal, 1950
- Physical Principles Involved in Transistor ActionPhysical Review B, 1949
- Surface States and Rectification at a Metal Semi-Conductor ContactPhysical Review B, 1947