On the Current Gain of Germanium Filamentary Transistors
- 1 August 1954
- journal article
- Published by IOP Publishing in Proceedings of the Physical Society. Section B
- Vol. 67 (8) , 625-635
- https://doi.org/10.1088/0370-1301/67/8/304
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Current Multiplication Processes in n-Type Germanium Point-Contact TransistorsProceedings of the Physical Society. Section B, 1954
- The Temperature Dependence of the Drift Mobility of Injected Holes in GermaniumProceedings of the Physical Society. Section B, 1954
- The Reduction of Rectifier Noise by IlluminationProceedings of the Physical Society. Section B, 1953
- Drift Mobilities in Semiconductors. I. GermaniumPhysical Review B, 1953
- A Study of Carrier Injecting Properties of Emitter Contacts and Light Spots at Normal and Moderately Elevated TemperaturesProceedings of the Physical Society. Section B, 1953
- The Temperature Dependence of Drift Mobility in GermaniumPhysical Review B, 1953
- Shot Noise in Germanium FilamentsJournal of Applied Physics, 1953
- Electrical Noise In SemiconductorsBell System Technical Journal, 1952
- Properties of Ionic Bombarded SiliconBell System Technical Journal, 1952
- Surface States and Rectification at a Metal Semi-Conductor ContactPhysical Review B, 1947