HEMT's and New Devices for High-Speed Applications
- 1 September 1987
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
This paper describes the state of the art in the research and development of HEMT's and new devices for microwave-frequency and high-speed applications in Japan. Low-noise HEMT's have already been commercial available, and are successfully utilized in the application such as satellite-communications and radio astronomy. A 4.1K HEMT gate array was fabricated, which was the largest scale HEMT logic LSI. This gate array realized a 16 × 16 bit parallel multiplier which exhibited the multiplication-time of 4.1 ns at 300 K. A new functional, resonant-tunneling hot electron transistor (RHET) was demonstrated, which enables us to build an Exclusive-NOR gate using only one transistor. A HBT with a modified collector structure in which electron transport can mostly be confined to Γ-valley of GaAs was developed, and the HBT achieved the maximum fT as high as 105 GHz at a collector current density in the mid 104 A/cm2.Keywords
This publication has 13 references indexed in Scilit:
- A 40-ps high electron mobility transistor 4.1 K gate arrayIEEE Journal of Solid-State Circuits, 1988
- IVA-6 a novel AlGaAs/GaAs HBT structure for near-ballistic collectionIEEE Transactions on Electron Devices, 1987
- Cryogenically cooled K-band high electron mobility transistor receiver for radio astronomical observationReview of Scientific Instruments, 1987
- FET's and HEMT's at Cryogenic Temperatures - Their Properties and Use in Low-Noise AmplifiersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1987
- Super Low-Noise HEMTs with a T-Shaped Gate StructurePublished by Institute of Electrical and Electronics Engineers (IEEE) ,1987
- Resonant tunneling hot-electron transistor with current gain of 5Applied Physics Letters, 1986
- A high electron mobility transistor 1.5K gate arrayPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1986
- Dependence of the Mobility and the Concentration of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlxGa1-xAs Heterostructure on the AlAs Mole FractionJapanese Journal of Applied Physics, 1983
- Selective Dry Etching of AlGaAs-GaAs HeterojunctionJapanese Journal of Applied Physics, 1981
- Low-noise two-dimensional electron gas FETElectronics Letters, 1981