Selective Dry Etching of AlGaAs-GaAs Heterojunction
- 1 November 1981
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 20 (11) , L847-850
- https://doi.org/10.1143/jjap.20.l847
Abstract
Selective dry etching of GaAs to Al x Ga1-x As (x=0.3) using an etching gas composed of CCl2F2 and helium was studied. Etching was carried out at gas composition ratios of P CCl2F2 /P He above 0.25, total pressures of 0.5 to 5.0 Pa, and power densities of 0.18 to 0.53 W/cm2. A high selectivity ratio exceeding 200 and a clean etch profile were obtained at a gas composition ratio of P CCl2F2 /P He=1 operated at 5 Pa and 0.18 W/cm2. The etched profile of GaAs under the above conditions exhibited a nearly vertical-wall character.Keywords
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