Reactive-ion etching of GaAs and InP using CCl2F2/Ar/O2
- 1 December 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (11) , 1022-1024
- https://doi.org/10.1063/1.91750
Abstract
We describe the reactive ion etching of GaAs, InP, and their derivative compounds using an etch gas composed of CCl2F2, O2, and argon. Etching was generally carried out at pressures between 1 and 10 μ, and power densities below 0.8 W/cm2. Clean etch profiles were obtained with etch rates as high as 0.25 μm/min. A strong dependence of etch rate on pressure was observed with a maximum at 5 μ total pressure. The etch profiles exhibited a ’’negative undercut’’ character which was also dependent upon the total pressure.Keywords
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