Homogeneous linewidth of self-assembled III–V quantum dots observed in single-dot photoluminescence

This publication has 20 references indexed in Scilit:

• Temperature dependence of the exciton homogeneous linewidth inIn0.60Ga0.40As/GaAsself-assembled quantum dots
  Physical Review B, 2002
• Long Lived Coherence in Self-Assembled Quantum Dots
  Physical Review Letters, 2001
• Near-Field Coherent Spectroscopy and Microscopy of a Quantum Dot System
  Science, 2001
• Ultralong Dephasing Time in InGaAs Quantum Dots
  Physical Review Letters, 2001
• Homogeneous linewidth broadening in a ${\mathrm{In}}_{0.5}{\mathrm{Ga}}_{0.5}\mathrm{A}\mathrm{s}/\mathrm{G}\mathrm{a}\mathrm{A}\mathrm{s}$ single quantum dot at room temperature investigated using a highly sensitive near-field scanning optical microscope
  Physical Review B, 2001
• Dephasing in InAs/GaAs quantum dots
  Physical Review B, 1999
• Electron and HolegFactors and Exchange Interaction from Studies of the Exciton Fine Structure inIn0.60Ga0.40AsQuantum Dots
  Physical Review Letters, 1999
• Microscopic Photoluminescence Study of InAs Single Quantum Dots Grown on (100) GaAs
  Japanese Journal of Applied Physics, 1999
• Temperature dependence of microscopic photoluminescence spectra of quantum dots and quantum wells
  Physica E: Low-dimensional Systems and Nanostructures, 1998
• Dephasing Processes in Self-Organized Strained InGaAs Single-Dots on (311)B-GaAs Substrate
  Japanese Journal of Applied Physics, 1997