Study of gap states density in A-Si: H using thermally stimulated current in a space charge zone
- 1 October 1983
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 48 (1) , 79-83
- https://doi.org/10.1016/0038-1098(83)90188-6
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Effect of Adsorbates on the Trapping Properties in Hydrogenated Amorphous Silicon FilmsJapanese Journal of Applied Physics, 1982
- Direct measurement of gap-state absorption in hydrogenated amorphous silicon by photothermal deflection spectroscopyPhysical Review B, 1982
- Measurement of the density of gap states in hydrogenated amorphous silicon by space charge spectroscopyPhysical Review B, 1982
- Evidence for Exponential Band Tails in Amorphous Silicon HydridePhysical Review Letters, 1981
- Thermally Stimulated Currents in Semiconductors and Insulators Having Arbitrary Trap DistributionsPhysical Review B, 1973