Effect of Adsorbates on the Trapping Properties in Hydrogenated Amorphous Silicon Films
- 1 November 1982
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 21 (11A) , L664
- https://doi.org/10.1143/jjap.21.l664
Abstract
We have carried out the measurements of thermally stimulated currents in order to clarify the effect of adsorbates such as oxygen and water on the trapping properties in a-Si: H. The active trapping levels in samples annealed at 150°C are estimated to be located at 0.36 eV and 0.41 eV for adsorption of oxygen and 0.49 eV for that of water on the surface of a-Si: H below the edge of the conduction band, respectively. Moreover, a trapping level which may be associated with bulk properties has been found at 0.22 eV.Keywords
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