Influence of interface charges on transport measurements in amorphous silicon films
Open Access
- 1 January 1978
- journal article
- Published by EDP Sciences in Journal de Physique
- Vol. 39 (11) , 1241-1246
- https://doi.org/10.1051/jphys:0197800390110124100
Abstract
Journal de Physique, Journal de Physique Archives représente une mine d informations facile à consulter sur la manière dont la physique a été publiée depuis 1872.Keywords
This publication has 6 references indexed in Scilit:
- Hydrogenation of evaporated amorphous silicon films by plasma treatmentApplied Physics Letters, 1978
- Photoconductivity and recombination in doped amorphous siliconPhilosophical Magazine, 1977
- Reversible conductivity changes in discharge-produced amorphous SiApplied Physics Letters, 1977
- Spin-dependent photoconductivity in n-type and p-type amorphous siliconSolid State Communications, 1977
- Doping, Schottky barrier and pn junction formation in amorphous germanium and silicon by rf sputteringSolid State Communications, 1976
- The Preparation and Properties of Amorphous SiliconJournal of the Electrochemical Society, 1969