Hydrogenation of evaporated amorphous silicon films by plasma treatment
- 1 September 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 33 (5) , 440-442
- https://doi.org/10.1063/1.90370
Abstract
It is shown that heat treatment in a hydrogen plasma of pure amorphous silicon films prepared by UHV evaporation yields a material with no observable dangling bond ESR signal. This material has electrical properties similar to films prepared by a glow‐discharge decomposition of silane but a lower hydrogen content as deduced from ir absorption data.Keywords
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