Properties of amorphous silicon films— Dependence on deposition conditions
- 1 May 1975
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 17 (3) , 409-427
- https://doi.org/10.1016/0022-3093(75)90130-1
Abstract
No abstract availableKeywords
This publication has 23 references indexed in Scilit:
- Properties of amorphous silicon films: Dependence on deposition rateSolid State Communications, 1973
- Evaluation of Mott's Parameters for Hopping Conduction in Amorphous Ge, Si, and Se-SiPhysical Review Letters, 1973
- Evidence for the Mott Model of Hopping Conduction in the Anneal Stable State of Amorphous SiliconPhysical Review Letters, 1972
- Electronic transport and state distribution in amorphous Si filmsJournal of Non-Crystalline Solids, 1972
- Electrical conduction in evaporated amorphous silicon filmsJournal of Non-Crystalline Solids, 1972
- Properties of glow-discharge deposited amorphous germanium and siliconJournal of Non-Crystalline Solids, 1970
- Structural, Optical, and Electrical Properties of Amorphous Silicon FilmsPhysical Review B, 1970
- Electrical conduction in amorphous silicon and germaniumThin Solid Films, 1968
- Infrared Absorption and Oxygen Content in Silicon and GermaniumPhysical Review B, 1956
- Das ultrarote Reflexionsspektrum von Silikaten. IIThe European Physical Journal A, 1936