Heteroepitaxial Growth of Cubic Boron Nitride Single Crystal on Diamond Seed Under High Pressure
- 1 January 1997
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- High pressure synthesis of semiconducting Be-doped polycrystalline cubic boron nitride and its electrical propertiesApplied Physics Letters, 1993
- Epitaxial growth of diamond thin films on cubic boron nitride {111} surfaces by dc plasma chemical vapor depositionApplied Physics Letters, 1990
- Crystal growth of cubic boron nitride using Li3BN2 solvent under high temperature and pressureJournal of Crystal Growth, 1989
- High-Temperature Cubic Boron Nitride P-N Junction Diode Made at High PressureScience, 1987
- Crystal growth of cubic boron nitride by temperature difference method at ∼55 kbar and ∼1800 °CJournal of Applied Physics, 1987
- Sintered Superhard MaterialsScience, 1980
- Diamond growth rates and physical properties of laboratory-made diamondThe Journal of Physical Chemistry, 1971
- Preparation of Semiconducting Cubic Boron NitrideThe Journal of Chemical Physics, 1962