An investigation of epitaxial films by means of high energy electron diffraction
- 1 June 1973
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 16 (3) , 297-303
- https://doi.org/10.1016/0040-6090(73)90083-7
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Reflection high energy electron diffraction patterns of twinned F. C. C. filmsPhysica Status Solidi (a), 1971
- Crystalline structure of germanium films on silicon substratesThin Solid Films, 1971
- Crystalline structure of germanium films on silicon substratesThin Solid Films, 1971
- Epitaxial growth behavior of Ge on Si {111} surfacesPhysica Status Solidi (a), 1970
- Morphology of Epitaxial Growth of GaAs by a Molecular Beam Method: The Observation of Surface StructuresJournal of Applied Physics, 1970
- A study of nucleation in chemically grown epitaxial silicon films using molecular beam techniquesPhilosophical Magazine, 1966
- Variation du facteur de condensation des jets moléculaires d'antimoine et de cadmium en fonction du support et de l'épaisseur de la coucheJournal de Physique et le Radium, 1953