Epitaxial growth behavior of Ge on Si {111} surfaces
- 16 December 1970
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 3 (4) , 907-911
- https://doi.org/10.1002/pssa.19700030408
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Observations of ß-SiC formation on reconstructed Si surfacesPhysica Status Solidi (a), 1970
- The influence of substrate surface conditions on the nucleation and growth of epitaxial silicon filmsSurface Science, 1969
- Epitaxial Growth of Ge Layers on Si Substrates by Vacuum EvaporationJapanese Journal of Applied Physics, 1968
- X-Ray Analysis of Interface Layer in Ge-Si n-n HeterojunctionJapanese Journal of Applied Physics, 1968
- A LOW-ENERGY ELECTRON DIFFRACTION STUDY OF THE EPITAXIAL SILICON LAYERS ON A Ge(111) SURFACEApplied Physics Letters, 1967
- Electron Microprobe Analysis of the Mixing Profile of Ge–Si Alloyed HeterojunctionsJournal of Applied Physics, 1967
- Electrical and Optical Properties of Ge-Si n-n HeterojunctionsJapanese Journal of Applied Physics, 1966