Electrical and Optical Properties of Ge-Si n-n Heterojunctions
- 1 July 1966
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 5 (7) , 639B-640
- https://doi.org/10.1143/jjap.5.639b
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Optical phenomena in GeGaP heterojunctionsSolid-State Electronics, 1965
- THE FIELD-EFFECT INTERFACE CONDUCTANCE IN Ge—GaAs n-n HETEROJUNCTIONSApplied Physics Letters, 1964
- Work Function, Photoelectric Threshold, and Surface States of Atomically Clean SiliconPhysical Review B, 1962
- Photoelectric emission and work functions of InSb, GaAs, Bi2Te3 and germaniumJournal of Physics and Chemistry of Solids, 1959