Optical phenomena in GeGaP heterojunctions
- 1 August 1965
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 8 (8) , 631-640
- https://doi.org/10.1016/0038-1101(65)90030-4
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
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- The Position of the Fermi Level at a Hetero‐Junction InterfacePhysica Status Solidi (b), 1964
- Barrier Height Studies on Metal-Semiconductor SystemsJournal of Applied Physics, 1963
- Proposal for reduction of diffraction losses in P-N lasersPhysica, 1963
- Experiments on Ge-GaAs heterojunctionsSolid-State Electronics, 1962
- Epitaxial growth of Ge on GaPPhysica, 1962