THE FIELD-EFFECT INTERFACE CONDUCTANCE IN Ge—GaAs n-n HETEROJUNCTIONS
- 1 January 1964
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 4 (1) , 3-4
- https://doi.org/10.1063/1.1723579
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Experiments on Ge-GaAs heterojunctionsSolid-State Electronics, 1962
- Germanium-Gallium Arsenide Heterojunctions [Letter to the Editor]IBM Journal of Research and Development, 1960
- Effective Carrier Mobility in Surface-Space Charge LayersPhysical Review B, 1955