X-Ray Analysis of Interface Layer in Ge-Si n-n Heterojunction
- 1 May 1968
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 7 (5)
- https://doi.org/10.1143/jjap.7.562
Abstract
No abstract availableThis publication has 2 references indexed in Scilit:
- Electrical and Optical Properties of Ge-Si n-n HeterojunctionsJapanese Journal of Applied Physics, 1966
- Some Properties of Germanium-Silicon AlloysPhysical Review B, 1954