The influence of substrate surface conditions on the nucleation and growth of epitaxial silicon films
- 31 May 1969
- journal article
- Published by Elsevier in Surface Science
- Vol. 15 (1) , 1-13
- https://doi.org/10.1016/0039-6028(69)90062-4
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Carbon contamination of Si (111) surfacesSurface Science, 1969
- A study of nucleation in chemically grown epitaxial silicon films using molecular beam techniques. IV. Additional confirmation of the induction period and nucleation mechanismsPhilosophical Magazine, 1968
- A study of nucleation in chemically grown epitaxial silicon films using molecular beam techniques III. Nucleation rate measurements and the effect of oxygen on initial growth behaviourPhilosophical Magazine, 1967
- A study of nucleation in chemically grown epitaxial silicon films using molecular beam techniquesPhilosophical Magazine, 1966
- A study of nucleation in chemically grown epitaxial silicon films using molecular beam techniques I.—experimental methodsPhilosophical Magazine, 1966
- Concerning the carbon content in semiconductor siliconSolid-State Electronics, 1965
- PREPARATION OF ATOMICALLY CLEAN SURFACES OF Si AND Ge BY HEATING IN VACUUMApplied Physics Letters, 1965
- Low Voltage Electron Diffraction Study of the Oxidation and Reduction of SiliconJournal of Applied Physics, 1962
- The diffusivity of carbon in siliconJournal of Physics and Chemistry of Solids, 1961
- Cleaning of Silicon Surfaces by Heating in High VacuumJournal of Applied Physics, 1959