A class of spin injection-precession ultrafast nanodevices
- 22 March 2004
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 84 (12) , 2118-2120
- https://doi.org/10.1063/1.1667002
Abstract
Spin valve ultrafast spin injection devices are described: an amplifier, a frequency multiplier, and a square-law detector. Their operation is based on injection of spin polarized electrons from one ferromagnet to another through a semiconductor layer and spin precession of the electrons in the semiconductor layer in a magnetic field induced by a (base) current in an adjacent nanowire. The base current can control the emitter current between the magnetic layers with frequencies up to several 100 GHz.Keywords
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This publication has 13 references indexed in Scilit:
- Spin-dependent properties of a two-dimensional electron gas with ferromagnetic gatesApplied Physics Letters, 2002
- Spin diffusion and injection in semiconductor structures: Electric field effectsPhysical Review B, 2002
- Electric-field dependent spin diffusion and spin injection into semiconductorsPhysical Review B, 2002
- Electron spin injection at a Schottky contactPhysical Review B, 2002
- Spin-valve effects in a semiconductor field-effect transistor: A spintronic devicePhysical Review B, 1999
- How to Define and Calculate the Degree of Spin Polarization in FerromagnetsPhysical Review Letters, 1999
- Tunneling of electrons in conventional and half-metallic systems: Towards very large magnetoresistancePhysical Review B, 1997
- Large Magnetoresistance at Room Temperature in Ferromagnetic Thin Film Tunnel JunctionsPhysical Review Letters, 1995
- Conductance and exchange coupling of two ferromagnets separated by a tunneling barrierPhysical Review B, 1989
- Giant Magnetoresistance of (001)Fe/(001)Cr Magnetic SuperlatticesPhysical Review Letters, 1988