Electric-field dependent spin diffusion and spin injection into semiconductors
- 14 November 2002
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 66 (20) , 201202
- https://doi.org/10.1103/physrevb.66.201202
Abstract
We derive a drift-diffusion equation for spin polarization in semiconductors by consistently taking into account electric-field effects and nondegenerate electron statistics. We identify a high electric-field diffusive regime which has no analog in metals. In this regime there are two distinct spin-diffusion lengths. Furthermore, spin injection from a ferromagnetic metal into a semiconductor is enhanced by several orders of magnitude. This enhancement also occurs for high electric-field spin injection through a spin-selective interfacial barrier.Keywords
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