Electric-field dependent spin diffusion and spin injection into semiconductors

Preprint

23 January 2002

preprint
Published by arXiv in arXiv

https://doi.org/10.48550/arXiv.cond-mat/0201425

Abstract

We derive a drift-diffusion equation for spin polarization in semiconductors by consistently taking into account electric-field effects and nondegenerate electron statistics. We identify a high-field diffusive regime which has no analogue in metals. In this regime there are two distinct spin diffusion lengths. Furthermore, spin injection from a ferromagnetic metal into a semiconductor is enhanced by several orders of magnitude and spins can be transported over distances much greater than the low-field spin diffusion length.

Keywords

SPIN POLARIZATION
FIELD DEPENDENT
SPIN DIFFUSION
SPIN INJECTION
ELECTRIC FIELD
SEMICONDUCTORS
FERROMAGNETIC
DRIFT

All Related Versions

Version 1, 2002-01-23, ArXiv
Published version: Physical Review B, 66 (20), 201202.

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