Single crystal growth of hexagonal SiC on cubic SiC by intentional polytype control
- 1 January 1990
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 99 (1-4) , 278-283
- https://doi.org/10.1016/0022-0248(90)90527-r
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- IVA-8 heteroepitaxial growth of cubic silicon carbide on foreign substratesIEEE Transactions on Electron Devices, 1981
- General principles of growing large-size single crystals of various silicon carbide polytypesJournal of Crystal Growth, 1981
- Investigation of phase transformations and polytype stability of ß-SiCPhysica Status Solidi (a), 1977
- Low-Temperature Solid-State Phase Transformations in 2H Silicon CarbideJournal of Applied Physics, 1972
- Direct transformation from the 2H to the 6H structure in single-crystal silicon carbideJournal of Crystal Growth, 1971
- The structure, perfection and annealing behaviour of SiC needles grown by a VLS mechanismJournal of Crystal Growth, 1971
- Phase transformations, habit changes and crystal growth in SiCJournal of Crystal Growth, 1971
- The discovery of a 2H-3C solid state transformation in silicon carbide single crystalsJournal of Crystal Growth, 1971
- Structures et proprietes magnetiques de quelques composes de formule M Fe F3 (M Na, K, Rb, Cs, NH4, T1)Materials Research Bulletin, 1969
- Raman Scattering inSiCPhysical Review B, 1968