Growth and photoluminescence investigations of phosphorus- and iodine-doped MOVPE ZnTe layers
- 1 February 1993
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 126 (4) , 643-650
- https://doi.org/10.1016/0022-0248(93)90815-e
Abstract
No abstract availableThis publication has 21 references indexed in Scilit:
- Reflectivity and absorption of thin ZnTe epilayers near the exciton-polaritonSemiconductor Science and Technology, 1991
- The MOVPE growth and doping of ZnTeSemiconductor Science and Technology, 1991
- Excited Acceptor States in II–VI and III–V SemiconductorsPhysica Status Solidi (b), 1990
- Characterization of thin layers on perfect crystals with a multipurpose high resolution x-ray diffractometerJournal of Vacuum Science & Technology B, 1983
- Self-compensation in II–VI compoundsProgress in Crystal Growth and Characterization, 1981
- Shallow-acceptor, donor, free-exciton, and bound-exciton states in high-purity zinc telluridePhysical Review B, 1980
- Ionization energy of the complex acceptor in ZnTePhysica Status Solidi (b), 1979
- Electronic Raman scattering and infrared absorption spectra of shallow acceptors in ZnTePhysical Review B, 1979
- The Luminescent Center in Self-Activated ZnS PhosphorsJournal of the Electrochemical Society, 1959
- Self-Activation and Self-Coactivation in Zinc Sulfide PhosphorsThe Journal of Chemical Physics, 1956