Gain characteristics of quantum dot injection lasers
- 1 January 1999
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 14 (1) , 118-123
- https://doi.org/10.1088/0268-1242/14/1/020
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Low threshold quantum dot injection laseremitting at 1.9 µmElectronics Letters, 1998
- Radiation characteristics of injection lasers based on vertically coupled quantum dotsSuperlattices and Microstructures, 1997
- Low-threshold injection lasers based on vertically coupled quantum dotsJournal of Crystal Growth, 1997
- Gain and differential gain of single layer InAs/GaAs quantum dot injection lasersApplied Physics Letters, 1996
- Prevention of gain saturation by multi-layer quantumdot lasersElectronics Letters, 1996
- Strained single quantum well InGaAs lasers with a threshold current of 0.25 mAApplied Physics Letters, 1993
- Gain and the threshold of three-dimensional quantum-box lasersIEEE Journal of Quantum Electronics, 1986
- Analysis and application of theoretical gain curves to the design of multi-quantum-well lasersIEEE Journal of Quantum Electronics, 1985
- Multidimensional quantum well laser and temperature dependence of its threshold currentApplied Physics Letters, 1982
- Laser oscillation from quantum states in very thin GaAs−Al0.2Ga0.8As multilayer structuresApplied Physics Letters, 1975