Strained single quantum well InGaAs lasers with a threshold current of 0.25 mA
- 8 November 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (19) , 2621-2623
- https://doi.org/10.1063/1.110425
Abstract
Strained layer single quantum well InGaAs lasers with a record low threshold current of 1 mA for as-cleaved facets and 0.25 mA with high reflectivity coated facets have been demonstrated. In addition, these lasers display a weak dependence of threshold current, quantum efficiency, and lasing wavelength on cavity length in comparison with those single quantum well lasers previously reported.Keywords
This publication has 12 references indexed in Scilit:
- Ultralow threshold multiquantum well InGaAs lasersApplied Physics Letters, 1992
- On the high speed modulation bandwidth of quantum well lasersApplied Physics Letters, 1992
- A submilliampere-threshold multiquantum-well AlGaAs laser without facet coating using single-step MOCVDIEEE Journal of Quantum Electronics, 1992
- Cavity length dependence of the wavelength of strained-layer InGaAs/GaAs lasersApplied Physics Letters, 1990
- Submilliamp threshold InGaAs-GaAs strained layer quantum-well laserIEEE Journal of Quantum Electronics, 1990
- Submilliampere threshold current pseudomorphic InGaAs/AlGaAs buried-heterostructure quantum well lasers grown by molecular beam epitaxyApplied Physics Letters, 1989
- Scaling of GaAs/AlGaAs laser diodes for submilliampere threshold currentElectronics Letters, 1989
- Low-Threshold Patterned quantum well lasers grown by molecular beam epitaxyElectronics Letters, 1988
- Threshold current of single quantum well lasers: The role of the confining layersApplied Physics Letters, 1986
- Ultra-low threshold, graded-index waveguide, separate confinement, CW buried-heterostructure lasersElectronics Letters, 1982