Ultralow threshold multiquantum well InGaAs lasers

13 April 1992

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 60 (15) , 1782-1784
https://doi.org/10.1063/1.107186

Abstract

Ultralow threshold currents have been obtained in multiquantum well strained-layer InGaAs lasers. A cw threshold current of 1 mA in an uncoated double quantum well laser and a 0.35 mA (pulsed threshold current 0.25 mA) in a coated laser are demonstrated.

Keywords

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