A Comparison of Ionizing Radiation and Hot Electron Effects in MOS Structures
- 1 January 1984
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 31 (6) , 1573-1575
- https://doi.org/10.1109/tns.1984.4333553
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Hole traps and trivalent silicon centers in metal/oxide/silicon devicesJournal of Applied Physics, 1984
- 2 9Si hyperfine structure of unpaired spins at the Si/SiO2 interfaceApplied Physics Letters, 1983
- An electron spin resonance study of radiation-induced electrically active paramagnetic centers at the Si/SiO2 interfaceJournal of Applied Physics, 1983
- Radiation-Induced Defects in SiO2 as Determined with XPSIEEE Transactions on Nuclear Science, 1982
- Effect of bias on radiation-induced paramagnetic defects at the silicon-silicon dioxide interfaceApplied Physics Letters, 1982
- Radiation-Induced Trivalent Silicon Defect Buildup at the Si-SiO2 Interface in MOS StructuresIEEE Transactions on Nuclear Science, 1981
- ESR centers, interface states, and oxide fixed charge in thermally oxidized silicon wafersJournal of Applied Physics, 1979
- High-field transport in SiO2 on silicon induced by corona charging of the unmetallized surfaceJournal of Applied Physics, 1976
- Radiation-Induced Defect Centers in Thermally Grown Oxide FilmsIEEE Transactions on Nuclear Science, 1975
- Study of Silicon-Silicon Dioxide Structure by Electron Spin Resonance IJapanese Journal of Applied Physics, 1971