The critical transport properties of doped semiconductors
- 1 January 1987
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine Part B
- Vol. 55 (1) , 1-8
- https://doi.org/10.1080/13642818708211252
Abstract
It is shown that the role of valley degeneracy is essential in enhancing the Hartree interaction terms over the exchange terms and thereby causing different critical transport properties in doped semiconductors. We predict, following the arguments of Kaveh, that for uncompensated many-valley semiconductors, the critical conductivity exponent is v = ½ and the critical exponent for the dielectric constant is 2v = 1.Keywords
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