Comparison of doping profiles in capless annealed and dielectrically capped — Annealed ion implanted GaAs
- 1 September 1980
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 9 (5) , 857-868
- https://doi.org/10.1007/bf02822722
Abstract
No abstract availableKeywords
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- The thermophysical properties research center. An effective answer to information needs on thermophysical properties of matterInternational Journal of Heat and Mass Transfer, 1963