The growth of Fe on sulphur passivated Ge(100): A technique for avoiding intermixing
- 15 April 1996
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 79 (8) , 5641-5643
- https://doi.org/10.1063/1.362267
Abstract
The growth of Fe on Ge(100) surfaces results in the intermixing of Ge with the Fe overlayer, producing relatively thick magnetic dead layers. In this paper we describe a new technique, the growth of Fe overlayers on S‐passivated Ge(100), which successfully prevents the intermixing of Ge with the Fe overlayer. Bcc Fe(100) is observed to grow epitaxially on this substrate, with the S floating out as an ordered overlayer. The S prevents intermixing by acting as a surfactant, holding the Fe on top of the substrate and preventing interdiffusion. The Fe overlayers are observed to be ferromagnetic in nature, displaying sharp hysteresis loops with easy axes along the Fe[010] directions. A uniaxial in‐plane anisotropy is observed, which results in the two easy axes being inequivalent.This publication has 6 references indexed in Scilit:
- The structure and magnetic properties of Fe deposited on Al(100)Surface Science, 1995
- Growth and Magnetic Properties of Epitaxial Fe(100) on S-Passivated GaAs(100)Physical Review Letters, 1995
- The S-passivation of Ge(100)-(1×1)Applied Physics Letters, 1995
- Properties of Fe single-crystal films grown on (100)GaAs by molecular-beam epitaxyJournal of Applied Physics, 1987
- Determination of the c(2 × 2) structure of sulfur on Fe{001} by low-energy electron diffractionSurface Science, 1977
- The Partial Equilibrium Diagram of the Fe-Ge System in the Range 40-72 at. % Ge, and the Crystallisation of some Iron Germanides by Chemical Transport Reactions.Acta Chemica Scandinavica, 1967