Dispersion relations of low-energy branches in the vibrational spectrum of cleaved GaAs(110)
- 15 March 1990
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 41 (8) , 5312-5314
- https://doi.org/10.1103/physrevb.41.5312
Abstract
A realistic calculation of the low-frequency phonon spectrum of cleaved GaAs(110) is presented. Our calculation is based on Chadi’s tight-binding theory for structural energies and the structural energies are simply determined by the bond-orbital approximation. A variety of interesting surface vibrational modes are found which agree well with the observation, in He-atom scattering experiments, of some acoustic branches of surface phonons.Keywords
This publication has 13 references indexed in Scilit:
- A Simple Scheme for Studies of Surface Phonons of Covalent Semiconductors. II. Surface Phonons at Ideal and Relaxed Si(110) SurfacePhysica Status Solidi (b), 1988
- A Simple Scheme for Studies of Surface Phonons of Covalent Semiconductors. I. Calculation of Force ConstantsPhysica Status Solidi (b), 1988
- Surface Phonons on GaAs(110) Measured by Inelastic Helium Atom ScatteringEurophysics Letters, 1987
- Renormalized acoustic branch in the vibrational spectrum of theπ-bonded–chain model of Si(111)21Physical Review Letters, 1987
- Surface reconstruction and vibrational excitations of Si(001)Physical Review B, 1987
- Surface states on GaAs(110)Surface Science, 1986
- Surface Vibrational Excitations on Si(001) 2 × 1Physical Review Letters, 1984
- Atomic and Electronic Structures of Reconstructed Si(100) SurfacesPhysical Review Letters, 1979
- Energy-Minimization Approach to the Atomic Geometry of Semiconductor SurfacesPhysical Review Letters, 1978
- Optical Modes of Vibration in an Ionic Crystal SlabPhysical Review B, 1965