Optical determination of mobility and carrier concentration in heavily doped polycrystalline silicon
- 1 February 1980
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (2) , 1157-1159
- https://doi.org/10.1063/1.327733
Abstract
Optical absorption of phosphorus‐doped polycrystalline Si films observed at photon energies below the energy gap has been interpreted in terms of free‐carrier absorption, which obeys the Drude theory. As a result, we can simultaneously determine conductivity, electron mobility, and carrier concentration of heavily doped polycrystalline Si films from their optical transmission spectra alone. The new technique offers a contactless measurement of electrical properties for heavily doped polycrystalline Si thin films.This publication has 9 references indexed in Scilit:
- Electronic properties of chemically deposited polycrystalline siliconJournal of Applied Physics, 1979
- Chemically Vapor Deposited Polycrystalline-Silicon FilmsIEEE Transactions on Parts, Hybrids, and Packaging, 1974
- Technology for monolithic high-power integrated circuits using polycrystalline Si for collector and isolation wallsIEEE Transactions on Electron Devices, 1973
- Pn junctions in polycristalline-silicon filmsSolid-State Electronics, 1972
- Physics looks at solar energyPhysics Today, 1972
- Silicon gate technologySolid-State Electronics, 1970
- Structural, Optical, and Electrical Properties of Amorphous Silicon FilmsPhysical Review B, 1970
- Effect of Doping on the Electron Spin Resonance in Phosphorus Doped Silicon. III. Absorption IntensityJournal of the Physics Society Japan, 1969
- Optical Effects in Bulk Silicon and GermaniumPhysical Review B, 1950