Simulations of quantized inversion layer electron transport in 6H–Silicon carbide metal oxide semiconductor structures
- 27 April 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 72 (17) , 2156-2158
- https://doi.org/10.1063/1.121307
Abstract
Monte Carlo analysis of channel mobility in 6H–SiC metal oxide semiconductors is presented with inclusion of electron quantization. Our simulation results fit available experimental data very well. Interface roughness scattering is shown to play a strong role in determining channel mobility. A roughness parameter of 7.5 Å is extracted from reported data.Keywords
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