First Phase Nucleation And Growth Of Titanium Disilicide With An iPhasis On The Influence Of Oxygen
- 1 January 1985
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
The existence of a TiSi2phase in the C49 (ZrSi2) structure prior to formation of the stable low resistivity C54 TiSi2structure has been justified for Ti-Si thin film diffusion couples after low temperature (500°C to 650°C) anneal. The transition temperature (Ttr) to the C54 phase is shown to be dependent on layer thickness, thinner films yielding higher Ttr. We could not detect an influence of oxygen on Ttr. Moreover the growth rate of C49 TiSi2is independent of oxygen contamination in the Ti layer up to a mean concentration of 23 at.%. It is postulated that the transition from the C49 to the C54 phase actually is a recrystallization process.Keywords
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