Quantum mechanical correction on capacitance‐voltage characteristics of narrow gap semiconductors

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Abstract
We show that for narrow band‐gap semiconductors, the doping concentration deduced from capacitance‐voltage measurements can be substantially underestimated due to surface quantization effect. While our derivation can be applied to all materials, detailed accounts on p‐type Hg0.788Cd0.212Te are given as an example. We found that for a practical doping range, 1×1015 cm−3 to 1×1017 cm−3, the doping level can be underestimated by 53% to 173%, respectively.